Impact of varied sulfur incorporation on the device performance of sequentially processed Cu(In,Ga)(Se,S)2 thin film solar cells-Reference-Cited by-同舟云学术

Impact of varied sulfur incorporation on the device performance of sequentially processed Cu(In,Ga)(Se,S)2 thin film solar cells

Published:2013-03-26 Issue:7 Volume:210 Page:1392-1399
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Knecht Robin¹,Hammer Maria S.¹,Parisi Jürgen¹,Riedel Ingo¹

Affiliation:

1. Energy and Semiconductor Research Laboratory; Department of Physics; University of Oldenburg; Carl-von-Ossietzky Strasse 9-11 26129 Oldenburg, Germany

Funder

EWE-Nachwuchsgruppe by the EWE AG Oldenburg, Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201228705/fullpdf

Reference29 articles.

1. A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors

2. Band gap engineering in polycrystalline Cu(In,Ga)(Se,S)2 chalcopyrite thin films

3. D. L. Young J. A. Abushama R. Noufi X. Li J. Keane T. A. Gessert J. S. Ward M. A. Contreras M. Symko-Davies T. J. Coutts 608 611

4. Band gap optimization in Cu(In1−xGax)(Se1−ySy)2 by controlled Ga and S incorporation during reaction of Cu-(In,Ga) intermetallics in H2Se and H2S

5. Optical functions and electronic structure ofCuInSe2,CuGaSe2,CuInS2,andCuGaS2

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