Effect of NH4 OH Treatment on Plasma-Assisted InP/Al2 O3 /SOI Direct Wafer Bonding-Reference-Cited by-同舟云学术

Effect of NH4 OH Treatment on Plasma-Assisted InP/Al2 O3 /SOI Direct Wafer Bonding

Published:2018-01-10 Issue:5 Volume:215 Page:1700739
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Gong Kewei¹^ORCID,Sun Changzheng¹,Xiong Bing¹,Han Yanjun¹,Hao Zhibiao¹,Wang Jian¹,Wang Lai¹,Li Hongtao¹

Affiliation:

1. Tsinghua National Laboratory for Information Science and Technology State Key Lab on Integrated Optoelectronics Department of Electronic Engineering Tsinghua University; Beijing 100084 P. R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

High Technology Research and Development Program of China

Tsinghua University

Open Fund of State Key Laboratory on Integrated Optoelectronics

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Photonic Integration on the Hybrid Silicon Evanescent Device Platform

2. Wafer fusion: materials issues and device results

3. Low temperature germanium to silicon direct wafer bonding using free radical exposure

4. Hybrid Integrated Platforms for Silicon Photonics

5. Silicon photonic devices and integrated circuits

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