AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate-Reference-Cited by-同舟云学术

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Published:2016-11-02 Issue:3 Volume:214 Page:1600555
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Y.¹,Ng G. I.¹²,Arulkumaran S.²,Liu Z. H.³,Ranjan K.²,Xing W. C.¹³,Ang K. S.²,Murmu P. P.⁴,Kennedy J.⁴

Affiliation:

1. School of Electrical and Electronic Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore

2. Temasek Laboratories@NTU; Nanyang Technological University; 9th Storey, BorderX Block, Research Techno Plaza, 50 Nanyang Drive Singapore 637553 Singapore

3. Singapore-MIT Alliance for Research and Technology; 1 Create Way, #10-01 Create Tower Singapore 138602 Singapore

4. National Isotope Centre; GNS Science; 30 Gracefield Road, PO Box 31312 Lower Hutt 5010 New Zealand

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600555/fullpdf

Reference29 articles.

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5. Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode

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