Solar blind photodetector based on epitaxial zinc doped Ga2 O3 thin film-Reference-Cited by-同舟云学术

Solar blind photodetector based on epitaxial zinc doped Ga2 O3 thin film

Published:2017-01-05 Issue:5 Volume:214 Page:1600688
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Alema Fikadu¹,Hertog Brian¹,Ledyaev Oleg¹,Volovik Dmitry¹,Thoma Grant¹,Miller Ross¹,Osinsky Andrei¹,Mukhopadhyay Partha²,Bakhshi Sara²,Ali Haider²,Schoenfeld Winston V.²

Affiliation:

1. Agnitron Technology Incorporated; Eden Prairie; MN 55346 USA

2. CREOL; The College of Optics and Photonics; University of Central Florida; 4000 Central Florida Blvd. Orlando FL 32816 USA

Funder

US Department of Defense Army Research Office

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. High-Performance Solar-Blind Photodetectors Based on Al<tex>$_rm x$</tex>Ga<tex>$_1-rm x$</tex>N Heterostructures

2. Schottky barrier photodetectors based on AlGaN

3. Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition

4. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films

5. MgxZn1−xO as a II–VI widegap semiconductor alloy

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