Extraction of Switching Parameters for Sr‐Doped YMnO 3 Thin Film-Reference-Cited by-同舟云学术

Extraction of Switching Parameters for Sr‐Doped YMnO 3 Thin Film

Published:2019-11-13 Issue:24 Volume:216 Page:1900780
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rathod Kunalsinh N.¹,Gadani Keval¹,Boricha Hetal¹,Sagapariya Khushal¹,Vaisnani Ajay¹,Dhruv Davit¹,Joshi Ashvini D.²,Singh Jitendra P.³,Chae Keun H.⁴,Asokan Kandasami⁵,Solanki Piyush S.¹,Shah Nikesh A.¹^ORCID

Affiliation:

1. Department of PhysicsSaurashtra University Rajkot 360005 India

2. Department of Nanoscience and Advanced MaterialsSaurashtra University Rajkot 360005 India

3. Pohang Accelerator LaboratoryPohang University of Science and Technology Pohang 37673 South Korea

4. Advanced Analysis CenterKorea Institute of Science and Technology Seoul 02792 Republic of Korea

5. Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi 110 067 India

Funder

University Grants Commission

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900780

Reference32 articles.

1. Resistive switching effects in oxide sandwiched structures

2. Emerging memories: resistive switching mechanisms and current status

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. Organic and hybrid resistive switching materials and devices

5. Nanoionics-based resistive switching memories

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