Thickness dependent structural and electrical properties of pulsed laser deposited Y0.95Ca0.05MnO3 thin films and the effect of high energy oxygen ion irradiation
Author:
Funder
Indian Institute of Teacher Education
Inter-University Accelerator Centre
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s00339-024-07886-w.pdf
Reference35 articles.
1. X. Liu, K.P. Biju, S. Park, I. Kim, M. Siddik, S. Sadaf, H. Hwang, Improved resistive switching properties in Pt/Pr0.7Ca0.3MnO3/Y2O3-stabilized ZrO2/W via-hole structures. Curr. Appl. Phys. 11, e58–e61 (2011)
2. P. Levy, F. Parisi, M. Quintero, L. Granja, J. Curiale, J. Sacanell, G. Leyva, G. Polla, Nonvolatile magnetoresistive memory in phase separated La0.325Pr0.300Ca0.375MnO3. Phys. Rev. B 65, 140401 (2002)
3. N. Fujimura, T. Ishida, T. Yoshimura, T. Ito, Epitaxially grown YMnO3 film: new candidate for non–volatile memory devices. Appl. Phys. Lett. 69, 1011–1013 (1996)
4. K. Gadani, K.N. Rathod, D. Dhruv, H. Boricha, K. Sagapariya, A.D. Joshi, D.D. Pandya, K. Asokan, P.S. Solanki, N.A. Shah, Defects dynamics in the resistive switching characteristics of Y0.95Sr0.05MnO3 films induced by electronic excitations. J. Alloys Compd. 788, 819–830 (2019)
5. K. Gadani, K.N. Rathod, D. Dhruv, V.G. Shrimali, B. Rajyaguru, J. Joseph, A.D. Joshi, D.D. Pandya, K. Asokan, P.S. Solanki, N.A. Shah, Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory device through electronic excitations. Mater. Sci. Semicond. Proc. 121, 105347 (2021)
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