Electrical characterization of ZnO/4H-SiC n-p heterojunction diode-Reference-Cited by-同舟云学术

Electrical characterization of ZnO/4H-SiC n-p heterojunction diode

Published:2016-02-22 Issue:5 Volume:213 Page:1120-1124
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kwietniewski Norbert¹,Masłyk Monika¹,Werbowy Aleksander¹,Taube Andrzej¹,Gierałtowska Sylwia²,Wachnicki Łukasz²,Sochacki Mariusz¹

Affiliation:

1. Institute of Microelectronics and Optoelectronics; Warsaw University of Technology; Koszykowa 75 00-662 Warsaw Poland

2. Institute of Physics; Polish Academy of Sciences; Al. Lotników 32/46 02-668 Warsaw Poland

Funder

National Science Centre

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

2. ZnO Schottky barriers and Ohmic contacts

3. Atomic layer deposition of ZnO: a review

4. Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

5. Preparation and properties of nitrogen doped p-type zinc oxide films by reactive magnetron sputtering

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