Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates-Reference-Cited by-同舟云学术

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Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

Published:2012-07 Issue:14 Volume:407 Page:2825-2828
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Zhang K.,Hao M.R.,Guo W.,Heeg T.,Schlom D.G.,Shen W.Z.,Pan X.Q.

Funder

National Science Foundation

Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films

2. MgxZn1−xO as a II–VI widegap semiconductor alloy

3. Wide-band gap oxide alloy: BeZnO

4. P-type doping and devices based on ZnO

5. A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and Characterization of P2O5 Doped ZnO;IOP Conference Series: Materials Science and Engineering;2018-10-23

2. Weak localization and size effects in thin In 2 O 3 films prepared by autowave oxidation;Physica E: Low-dimensional Systems and Nanostructures;2016-10

3. Electrical characterization of ZnO/4H-SiC n-p heterojunction diode;physica status solidi (a);2016-02-22

4. Epitaxial growth of ZnO on (1 1 1) Si free of an amorphous interlayer;Journal of Physics D: Applied Physics;2014-02-13

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