Donor and acceptor levels in impurity-doped semiconducting BaSi2 thin films for solar-cell application-Reference-Cited by-同舟云学术

Donor and acceptor levels in impurity-doped semiconducting BaSi2 thin films for solar-cell application

Published:2017-06-01 Issue:9 Volume:214 Page:1700019
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ajmal Khan M.¹,Suemasu T.²³

Affiliation:

1. National Institute of Technology; Fukushima College; Iwaki Fukushima 970-8034 Japan

2. Institute of Applied Physics; University of Tsukuba; Tsukuba Ibaraki 305-8573 Japan

3. Japan Science and Technology Agency; CREST; Chiyoda-ku Tokyo 102-0075 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Toward Cost-Effective Solar Energy Use

2. Thermoelectric properties of Ni-doped BaSi2

3. Photovoltaic materials: Present efficiencies and future challenges

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