Numerical Simulation of Copper Indium Gallium Diselenide Solar Cell with Ultra-Thin BaSi2 Back Surface Field Layer Using the Non-Toxic In2Se3 Buffer Layer-Reference-Cited by-同舟云学术

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cell with Ultra-Thin BaSi2 Back Surface Field Layer Using the Non-Toxic In2Se3 Buffer Layer

Published:2022-06-23 Issue:18 Volume:14 Page:12675-12682
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kanchan Km.,Sahu Anupam^ORCID,Kumar Brijesh

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01983-2.pdf

Reference45 articles.

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3. Asaduzzaman M, Hosen MB, Ali MK, Bahar AN (2017) Non-toxic buffer layers in flexible Cu(In,Ga)Se2 photovoltaic cell applications with optimized absorber thickness. Int J Photoenergy 2017:. https://doi.org/10.1155/2017/4561208

4. Wada T, Hashimoto Y, Nishiwaki S, Satoh THS, Negami T et al (2001) High-efficiency CIGS solar cells with modified CIGS surface. Sol Energy Mater Sol Cells 67:10

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