Study of atomic layer deposited ZrO2 and ZrO2 /TiO2 films for resistive switching application-Reference-Cited by-同舟云学术

Study of atomic layer deposited ZrO2 and ZrO2 /TiO2 films for resistive switching application

Published:2013-09-16 Issue:2 Volume:211 Page:301-309
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kärkkänen Irina¹,Shkabko Andrey¹,Heikkilä Mikko²,Niinistö Jaakko²,Ritala Mikko²,Leskelä Markku²,Hoffmann-Eifert Susanne¹,Waser Rainer¹

Affiliation:

1. Peter Grünberg Institut and JARA-FIT; Forschungszentrum Jülich GmbH; 52425 Jülich Germany

2. Laboratory of Inorganic Chemistry; University of Helsinki; PO Box 55, 00014 Helsinki Finland

Funder

European Community's Seventh Framework Programme

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201330034/fullpdf

Reference39 articles.

1. Nanoionics-based resistive switching memories

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Industrial Applications of Atomic Layer Deposition

4. Growth Behavior of Atomic-Layer-Deposited Pb(Zr,Ti)O[sub x] Thin Films on Planar Substrate and Three-Dimensional Hole Structures

5. Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer

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