Analysis of GaN-based light-emitting diodes degraded by generation of deep-level states-Reference-Cited by-同舟云学术

Analysis of GaN-based light-emitting diodes degraded by generation of deep-level states

Published:2014-06-30 Issue:8 Volume:211 Page:1764-1768
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jung Eunjin¹,Kim Hyunsoo¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, and Semiconductor Physics Research Center; Chonbuk National University; Jeonju 561-756 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Ministry of Education and National Research Foundation of Korea

Human Resource Training Project for Regional Innovation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201330501/fullpdf

Reference32 articles.

1. Light-Emitting Diodes

2. A Review on the Reliability of GaN-Based LEDs

3. A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

4. Optical Degradation of Phosphor-Converted White GaN-Based Light-Emitting Diodes under Electro-Thermal Stress

5. Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

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3. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires;Journal of Applied Physics;2016-01-28