Effect of Hydrogen on the Transport Mechanism of GaN-Based Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Effect of Hydrogen on the Transport Mechanism of GaN-Based Light-Emitting Diodes

Published:2016-11-01 Issue:11 Volume:16 Page:11771-11774
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Jung Eunjin¹,Lee June Key²,Choi Yunju³,Kim Hyunsoo¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea

2. Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea

3. 3Suncheon Center, Korea Basic Science Institute, Suncheon 540-742, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of electrochemical potentiostatic activation on carrier transport in AlGaN-based deep-ultraviolet light-emitting diodes;Journal of Vacuum Science & Technology A;2021-03

2. Influence of Size on Optical and Electrical Properties of GaN-Based Membrane μ-LED;Journal of Nanoscience and Nanotechnology;2020-01-01

3. Recent Advances in Plasmonic Nanolithography;Nanoscience and Nanotechnology Letters;2018-01-01

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