Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2 O6 as Gate Insulator Deposited by Sputtering Method-Reference-Cited by-同舟云学术

Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2 O6 as Gate Insulator Deposited by Sputtering Method

Published:2018-02-14 Issue:5 Volume:216 Page:1700773
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Takahashi Takanori¹^ORCID,Hoga Takeshi¹,Miyanaga Ryoko²,Oikawa Kento²,Fujii Mami N.²,Ishikawa Yasuaki²,Uraoka Yukiharu²,Uchiyama Kiyoshi¹

Affiliation:

1. National Institute of Technology, Tsuruoka College 104 Sawada, Tsuruoka; Yamagata 997-8511 Japan

2. Nara Institute of Science and Technology 8916-5 Takayama-cho, Ikoma; Nara 630-0192 Japan

Funder

Nara Institute of Science and Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700773/fullpdf

Reference23 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator

5. High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

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3. Balanced Performance Enhancements of a‐InGaZnO Thin Film Transistors by Using All‐Amorphous Dielectric Multilayers Sandwiching High‐k CaCu 3 Ti 4 O 12;Advanced Electronic Materials;2019-08-14

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