Stabilized resistive switching behaviors of a Pt/TaO x /TiN RRAM under different oxygen contents-Reference-Cited by-同舟云学术

Stabilized resistive switching behaviors of a Pt/TaO x /TiN RRAM under different oxygen contents

Published:2014-06-04 Issue:9 Volume:211 Page:2189-2194
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jeon Heeyoung¹,Park Jingyu¹,Jang Woochool²,Kim Hyunjung¹,Kang Chunho²³,Song Hyoseok²,Kim Honggi¹,Seo Hyungtak⁴⁵,Jeon Hyeongtag¹²

Affiliation:

1. Department of Nanoscale Semiconductor Engineering; Hanyang University; Seoul 133-791 Korea

2. Division of Materials Science and Engineering; Hanyang University; Seoul 133-791 Korea

3. FAB Manufacturing Division; SK Hynix, Inc.; 2091, Gyeongchung-Daero Bubal-Eub, Icheon-Si Gyeonggi-Do 167-701 Korea

4. Department of Materials Science and Engineering; Ajou University; Suwon 443-739 Korea

5. Department of Energy Systems Research; Ajou University; Suwon 443-739 Korea

Funder

Korean Government

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431260/fullpdf

Reference23 articles.

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4. Memristive devices for computing

5. I. G. Baek C. J. Park H. Ju D. J. Seong H. S. Ahn J. H. Kim M. K. Yang S. H. Song E. M. Kim S. O. Park C. H. Park C. W. Song G. T. Jeong S. Choi H. K. Kang C. Chung 2011

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