Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas-Reference-Cited by-同舟云学术

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

Published:2019-11-06 Issue:24 Volume:216 Page:1900538
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yang Mingchao¹²^ORCID,Sang Liwen³,Liao Meiyong²,Imura Masataka²,Li Hongdong¹,Koide Yasuo⁴

Affiliation:

1. State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin University Changchun 130012 P. R. China

2. Research Center for Functional MaterialsNational Institute for Materials Sciences Namiki 1-1 Tsukuba Ibaraki 305-0044 Japan

3. International Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science (NIMS) Namiki 1-1 Tsukuba Ibaraki 305-0044 Japan

4. Research Network and Facility Services DivisionNational Institute for Materials Science (NIMS) 1-2-1 Sengen Tsukuba Ibaraki 305-0047 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900538

Reference40 articles.

1. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors

2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

3. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

4. Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

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