Homoepitaxial boron-doped diamond with very low compensation-Reference-Cited by-同舟云学术

Homoepitaxial boron-doped diamond with very low compensation

Published:2012-08-06 Issue:9 Volume:209 Page:1750-1753
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Barjon J.,Chikoidze E.,Jomard F.,Dumont Y.,Pinault-Thaury M.-A.,Issaoui R.,Brinza O.,Achard J.,Silva F.

Funder

Aerospace Valley Cluster

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201200136/fullpdf

Reference11 articles.

1. Boron, the Dominant Acceptor in Semiconducting Diamond

2. Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications

3. The boron acceptor in diamond

4. Resistivity of boron doped diamond

5. 3D crystal growth model for understanding the role of plasma pre-treatment on CVD diamond crystal shape

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