Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS-Reference-Cited by-同舟云学术

Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS

Published:2019-06-04 Issue:17 Volume:216 Page:1900303
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Gwozdz Katarzyna¹,Kolkovsky Vladimir²,Weber Joerg²,Yakovleva Anastasia A.³,Astrov Yuri A.³

Affiliation:

1. Department of Quantum TechnologiesFaculty of Fundamental Problems of TechnologyWroclaw University of Science and TechnologyWybrzeze Wyspianskiego 2750‐370 WroclawPoland

2. Technische Universität DresdenInstitut für Angewandte Physik01062 DresdenGermany

3. Ioffe Physico‐Technical InstituteRussian Academy of SciencesPolitekhnicheskaya 26St. Petersburg 194021Russia

Funder

Erasmus Medisch Centrum

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900303

Reference23 articles.

1. Femtosecond laser-induced formation of spikes on silicon

2. Ultrafast laser processing of materials: a review

3. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

4. Improving Silicon Solar Cell Efficiency by Using the Impurity Photovoltaic Effect

5. The effect of dopant diffusion vapor pressure on the properties of sulfur and selenium doped silicon infrared detectors

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1. Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit;Japanese Journal of Applied Physics;2023-02-06

2. First-principles identification of deep energy levels of sulfur impurities in silicon and their carrier capture cross sections;Journal of Physics D: Applied Physics;2021-06-04