Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

Author:

Ban Yoshisuke,Kato KimihikoORCID,Iizuka ShotaORCID,Murakami Shigenori,Ishibashi Koji,Moriyama SatoshiORCID,Mori Takahiro,Ono Keiji

Abstract

Abstract To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, were introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to form deep levels, were introduced into the Si substrates by ion implantation. These samples were analyzed for concentration-depth profiles, energy level depths, and absence of defects. To introduce deep impurities into thin channels such as 50 nm thick Si, we found impurity introduction conditions such that the concentration depth profiles had maximum values at less than 50 nm from the Si surface. Then, the formation of the deep levels and absence of defects were experimentally examined. Using the conditions to introduce deep impurities into the Si wafer obtained from the experiments, single-electron transport at room temperature, high-temperature operation of qubit, and room-temperature quantum magnetic sensors are promising.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Quantum Processors in Silicon;Synthesis Lectures on Engineering, Science, and Technology;2024-07-14

2. Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs;Applied Physics Express;2023-11-01

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