Abstract
Abstract
To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, were introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to form deep levels, were introduced into the Si substrates by ion implantation. These samples were analyzed for concentration-depth profiles, energy level depths, and absence of defects. To introduce deep impurities into thin channels such as 50 nm thick Si, we found impurity introduction conditions such that the concentration depth profiles had maximum values at less than 50 nm from the Si surface. Then, the formation of the deep levels and absence of defects were experimentally examined. Using the conditions to introduce deep impurities into the Si wafer obtained from the experiments, single-electron transport at room temperature, high-temperature operation of qubit, and room-temperature quantum magnetic sensors are promising.
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
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