Influence of the boron emitter profile on V OC and J SC losses in fully ion implanted n-type PERT solar cells-Reference-Cited by-同舟云学术

Influence of the boron emitter profile on V OC and J SC losses in fully ion implanted n-type PERT solar cells

Published:2014-05-30 Issue:2 Volume:212 Page:291-297
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kiefer Fabian¹,Peibst Robby¹,Ohrdes Tobias¹,Dullweber Thorsten¹,Krügener Jan²,Osten H. Jörg²,Schöllhorn Claus³,Grohe Andreas³,Brendel Rolf¹

Affiliation:

1. Institute for Solar Energy Research Hamelin; Am Ohrberg 1 31860 Emmerthal Germany

2. Institute of Electronic Materials and Devices; Leibniz Universität Hannover; Schneiderberg 32 30176 Hannover Germany

3. Bosch Solar Energy; Robert-Bosch-Str. 1 99310 Arnstadt Germany

Funder

German Federal Ministry for the Environment

Nature Conservation

Nuclear Safety

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431118/fullpdf

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4. L. J. Geerligs I. G. Romijn A. R. Burgers N. Guillevin A. W. Weeber J. H. Bultman H. Wang F. Lang W. Zhao G. Li Z. Hu J. Xiong A. Vlooswijk 2012 001701 001704

5. Bifacial n-Type Cells With >20% Front-Side Efficiency for Industrial Production

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