Optical characterization of magnetron sputtered p-type ZnO thin films codoped with Ga and As-Reference-Cited by-同舟云学术

Optical characterization of magnetron sputtered p-type ZnO thin films codoped with Ga and As

Published:2011-10-26 Issue:2 Volume:209 Page:294-296
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Park Jang-Ho,Seo Ho-Yeon,Jeong Sang-Hun,Lee Byung-Teak

Funder

Korean Ministry of Education, Science, and Technology

Mid-career Researcher Program

Global Partnership Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127342/fullpdf

Reference17 articles.

1. Persistent n-type photoconductivity in p-type ZnO

2. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO

3. The future of ZnO light emitters

4. Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition

5. Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO∕p-ZnO:As∕GaAs structure

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1. P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping;ECS Journal of Solid State Science and Technology;2013

2. Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE;Journal of Physics D: Applied Physics;2012-12-06

3. Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen;Journal of Applied Physics;2012-11-15