Germanium Incorporation in Cu 2 ZnSnS 4 and Formation of a Sn–Ge Gradient-Reference-Cited by-同舟云学术

Germanium Incorporation in Cu 2 ZnSnS 4 and Formation of a Sn–Ge Gradient

Published:2019-10 Issue:22 Volume:216 Page:1900492
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Saini Nishant¹^ORCID,Larsen Jes K.¹,Sopiha Kostiantyn V.¹,Keller Jan¹,Ross Nils²,Platzer-Björkman Charlotte¹^ORCID

Affiliation:

1. Ångström Solar CenterDivision of Solid State ElectronicsDepartment of Engineering ScienceUppsala University Box 534 75121 Uppsala Sweden

2. Department of PhysicsCentre for Materials Science and NanotechnologyUniversity of Oslo P.O. Box 1048 Blindern Oslo N-0316 Norway

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900492

Reference83 articles.

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4. Inline Cu(In,Ga)Se$_{2}$ Co-evaporation for High-Efficiency Solar Cells and Modules

5. The effect of Ga-grading in CIGS thin film solar cells

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