Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond-Reference-Cited by-同舟云学术

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Published:2019-08-23 Issue:21 Volume:216 Page:1900241
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Remes Zdenek¹^ORCID,Stuchlik Jiri²,Stuchlikova Ha The²,Dragounova Katerina¹,Ashcheulov Petr³,Taylor Andrew³,Mortet Vincent³,Poruba Ales⁴

Affiliation:

1. Department of Optical MaterialsFZU – Institute of Physics of the Czech Academy of Sciences Na Slovance 2 Prague CZ-18221 Czech Republic

2. Department of Thin Films and NanostructuresFZU – Institute of Physics of the Czech Academy of Sciences Na Slovance 2 Prague CZ-18221 Czech Republic

3. Department of Functional MaterialsFZU – Institute of Physics of the Czech Academy of Sciences Na Slovance 2 Prague CZ-18221 Czech Republic

4. SVCS Process Innovation s.r.o. Zámecká 133/78 Valašské Meziříčí CZ-757 01 Czech Republic

Funder

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900241

Reference33 articles.

1. Hydrogenated Amorphous Silicon

2. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

3. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg2Si thin film

4. Optical properties of multilayer materials based on silicon and nanosized magnesium silicide crystallites

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