Pulse measurements of small area thin film μc-Si:H/ZnO:B photodiodes

Abstract

Abstract We introduce a triggered optoelectronic system operating in a pulse mode in the near infrared and visible spectral range 0.75– eV. The system measures current-voltage (I-V) characteristics in dark and under visible light illumination as well as electroluminescence (EL) spectra of small area thin film photodiodes and light emitting diodes with size below 1 mm2. The usefulness of the setup is demonstrated by measurement of optoelectronic properties of a hydrogenated microcrystalline silicon μc-Si:H)p-i-n diode deposited on a semi-transparent nanostructured ZnO:B electrode. No s-shaped I-Vcharacteristics were observed under white illumination near an open circuit voltage Uoc indicating a negligible charge accumulation near μc-Si:H/ZnO:B interface. The weak infrared EL correlates with the current density.