Comparison of boron diffusion in silicon during shallow p+ /n junction formation by non-melt excimer and green laser annealing-Reference-Cited by-同舟云学术

Comparison of boron diffusion in silicon during shallow p+ /n junction formation by non-melt excimer and green laser annealing

Published:2011-08-12 Issue:12 Volume:208 Page:2772-2777
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Aid Siti Rahmah,Matsumoto Satoru,Fuse Genshu,Sakuragi Susumu

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127198/fullpdf

Reference22 articles.

1. Design of ion-implanted MOSFET's with very small physical dimensions

2. H. W. Kennel M. D. Giles M. Diebel P. H. Keys J. Hwang S. Govindaraju M. Liu A. Budrevich The 14th IEEE Intl. Conf. on Adv. Thermal Proc. of Semiconductors - RTP 2006 85

3. T. Yamamoto T. Kudo T. Sukegawa Y. Wang L. Feng S. Talwar M. Kase Ext. Abstr. of the 5th Workshop on Junction Technology 2005 19

4. Optimization of the germanium preamorphization conditions for shallow-junction formation

5. Transient enhanced diffusion in preamorphized silicon: the role of the surface

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Repairing slight damages on monocrystalline silicon surface by thermal annealing;Materials Research Express;2021-04-01

2. Laser-matter interactions;Laser Annealing Processes in Semiconductor Technology;2021

3. A Study on Biological Sample Preparation for High Resolution Imaging of Scanning Electron Microscope;Journal of Physics: Conference Series;2020-01-01

4. Surface Patterning of Silicon and Germanium using Focused Ion Beam for the Development of FinFET Structure;2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM);2019-08

5. Interface Damage of Protective Layer in TEM Lamella Preparation for Highly Doped Ge Substrate;IOP Conference Series: Materials Science and Engineering;2019-06-10