Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low‐Frequency Noise Spectroscopy-Reference-Cited by-同舟云学术

Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low‐Frequency Noise Spectroscopy

Published:2019-10-22 Issue:7 Volume:217 Page:1900701
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ren Yuan¹²^ORCID,Zhou Leidang³,Zhang Kang²,Chen Liang⁴,Ouyang Xiaoping⁴,Chen Zhitao²,Zhang Baijun¹,Lu Xing¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of Electronics and Information TechnologySun Yat-sen University Guangzhou 510006 China

2. Guangdong Institute of Semiconductor Industrial TechnologyGuangdong Academy of Sciences Guangzhou 510650 China

3. School of MicroelectronicsXi'an Jiaotong University Xi'an 710049 China

4. Radiation Detection Research CenterNorthwest Institute of Nuclear Technology Xi'an 710024 China

Funder

Pearl River S and T Nova Program of Guangzhou

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900701

Reference27 articles.

1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

2. Gallium nitride vertical power devices on foreign substrates: a review and outlook

3. A review of GaN-based optoelectronic devices on silicon substrate

4. Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes

5. Review of using gallium nitride for ionizing radiation detection

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1. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

2. Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates;Journal of Alloys and Compounds;2022-03

3. Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes;Microelectronics Reliability;2021-10