Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates-Reference-Cited by-同舟云学术

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Published:2020-01-20 Issue:5 Volume:217 Page:1900556
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yang Kai¹,De Sagazan Olivier¹,Pichon Laurent¹^ORCID,Salaün Anne-Claire¹,Coulon Nathalie¹

Affiliation:

1. Institut d'Electronique et de Télécommunications de RennesIETR UMR CNRS 6164Université de Rennes 1 35042 Rennes France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900556

Reference43 articles.

1. A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon

2. Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films

3. Electrical Effects in GaAs and AlGaAs during Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition of SiN[sub x] Films

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