Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy 131 Xe+ implantation-Reference-Cited by-同舟云学术

Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy 131 Xe+ implantation

Published:2017-07-21 Issue:8 Volume:214 Page:1600794
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Yang¹,Ng Geok Ing¹²,Arulkumaran Subramaniam²,Liu Zhi Hong³,Ranjan Kumud²,Ang Kian Siong²,Murmu Peter Paul⁴,Kennedy John⁴⁵

Affiliation:

1. School of Electrical and Electronic Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798

2. Temasek Laboratories@NTU; Nanyang Technological University; 9th Storey, BorderX Block, Research Techno Plaza, 50 Nanyang Drive Singapore 637553

3. Singapore-MIT Alliance for Research and Technology; 1 Create Way, #10-01 Create Tower Singapore 138602

4. National Isotope Centre; GNS Science, 30 Gracefield Road, PO Box 31312 Lower Hutt 5010 New Zealand

5. The MacDiarmid Institute for Advanced Materials and Nanotechnology; Victoria University of Wellington; PO Box 600 Wellington 6140 New Zealand

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

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2. Very-high power density AlGaN/GaN HEMTs;Wu;IEEE Trans. Electron Devices,2001

3. Optimization of AlGaN/GaN HEMTs for high frequency operation;Palacios;Phys. Status Solidi,2006

4. Reverse gate-Current of AlGaN/GaN HFETs: Evidence of leakage at mesa sidewalls;Rahbardar Mojaver;IEEE Trans. Electron Devices,2016

5. Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si;Arulkumaran;J. Vac. Sci. Technol. B Microelectron. Nanometer Struct,2016

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