Design and Simulation of InGaN/GaN p-i-n Photodiodes-Reference-Cited by-同舟云学术

Design and Simulation of InGaN/GaN p-i-n Photodiodes

Published:2018-01-24 Issue:9 Volume:215 Page:1700521
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Elbar Mourad¹,Alshehri Bandar²,Tobbeche Souad¹^ORCID,Dogheche Elhadj²

Affiliation:

1. Laboratoire des matériaux semiconducteurs et métalliques (LMSM), Faculté des Sciences et de la Technologie, Département de Génie-Electrique, Université de Biskra; BP 145 07000 Biskra Algéria

2. IEMN, Institute of Electronics, Microelectronics and Nanotechnology, CNRS & University of Lille 1; Avenue Poincaré 59652 Vilneuve d'Ascq Cedex France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

2. Progress and prospects of group-III nitride semiconductors

3. Growth and applications of Group III-nitrides

4. Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance

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