Evaluations of crystal defects of 3C-SiC(1¯1¯1¯) film on Si(110) substrate-Reference-Cited by-同舟云学术

Evaluations of crystal defects of 3C-SiC(1¯1¯1¯) film on Si(110) substrate

Published:2016-02-29 Issue:5 Volume:213 Page:1125-1129
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sambonsuge Shota¹,Ito Shun²,Jiao Sai¹,Nagasawa Hiroyuki¹,Fukidome Hirokazu¹,Filimonov Sergey N.³,Suemitsu Maki¹

Affiliation:

1. RIEC; Tohoku University; 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan

2. IMR; Tohoku University; 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan

3. Department of Physics; Tomsk State University; Tomsk Russia

Funder

Japan Society for the Promotion of Science London

Bilateral Program on Joint Research Project

MEXT/JSPS KAKENHI

Tomsk State University Academic D. I. Mendeleev Fund

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532675/fullpdf

Reference26 articles.

1. Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

2. Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate

3. Epitaxial graphene on silicon substrates

4. Epitaxial Growth Processes of Graphene on Silicon Substrates

5. Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties

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2. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction;Journal of Applied Physics;2016-11-14

3. Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110);Diamond and Related Materials;2016-08

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