Facile strategy for the fabrication of efficient nonvolatile bistable memory devices based on polyvinylcarbazole-zinc oxide-Reference-Cited by-同舟云学术

Facile strategy for the fabrication of efficient nonvolatile bistable memory devices based on polyvinylcarbazole-zinc oxide

Published:2016-04-18 Issue:9 Volume:213 Page:2414-2424
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ramakrishnan Rajaraman¹,Jinesh K. B.²,Devaki Sudha J.¹,Varma Manoj Raama³

Affiliation:

1. Chemical Sciences and Technology Division; CSIR - National Institute for Interdisciplinary Science and Technology; Thiruvananthapuram 695 019 India

2. Department of Physics; Indian Institute of Space Science and Technology; Thiruvananthapuram 695 547 India

3. Material Science and Technology Division; CSIR - National Institute for Interdisciplinary Science and Technology; Thiruvananthapuram 695 019 India

Funder

CSIR-TAPSUN-NWP-54

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference59 articles.

1. Programmable polymer thin film and non-volatile memory device

2. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

3. Polymer electronic memories: Materials, devices and mechanisms

4. Bipolar one diode–one resistor integration for high-density resistive memory applications

5. Nonvolatile Memory Elements Based on Organic Materials

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