Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy-Reference-Cited by-同舟云学术

Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy

Published:2014-01-31 Issue:3 Volume:211 Page:531-535
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lee L. K.¹,Aagesen L. K.²,Thornton K.²,Ku P.-C.¹

Affiliation:

1. Department of Electrical Engineering and Computer Science; University of Michigan; 1301 Beal Ave. Ann Arbor MI 48109 USA

2. Department of Materials Science and Engineering; University of Michigan; 2300 Hayward St. Ann Arbor MI 48109 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Advances in growth and optical properties of GaN-based quantum dots

2. Near-red emission from site-controlled pyramidal InGaN quantum dots

3. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells

4. Enhanced optical gain in InGaN–AlGaN quantum wire and quantum dot lasers due to excitonic transitions

5. Spin coherence and dephasing in GaN

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency;Journal of Vacuum Science & Technology A;2023-11-07

2. Optical Properties of Low‐dimensional Structures in GroupIIINitrides;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18

3. Realization of Highly Efficient InGaN Green Light-Emitting Diodes with Laser-Annealed Multiple-Quantum Well Structures: Formation of Quantum Dot Structures;ACS Applied Optical Materials;2022-09-06

4. Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates;Journal of Crystal Growth;2020-06

5. Influence of surface nano-patterning on the placement of InAs quantum dots;Journal of Applied Physics;2018-09-21