Role of oxygen on the electrical activation of B in Ge by excimer laser annealing-Reference-Cited by-同舟云学术

Role of oxygen on the electrical activation of B in Ge by excimer laser annealing

Published:2013-12-13 Issue:1 Volume:211 Page:122-125
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Impellizzeri G.¹,Napolitani E.²,Milazzo R.²,Boninelli S.¹,Cuscunà M.³,Fisicaro G.⁴,La Magna A.⁴,Fortunato G.³,Priolo F.¹,Privitera V.¹

Affiliation:

1. CNR-IMM MATIS and Dipartimento di Fisica e Astronomia; via S. Sofia 64 95123 Catania Italy

2. CNR-IMM MATIS and Dipartimento di Fisica e Astronomia; via Marzolo 8 35131 Padova Italy

3. CNR-IMM; via del Fosso del Cavaliere100 00133 Roma Italy

4. CNR-IMM; Z. I. VIII strada 5 95121 Catania Italy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201300308/fullpdf

Reference17 articles.

1. Challenges and opportunities in advanced Ge pMOSFETs

2. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

3. Diffusion of boron in germanium at 800–900°C

4. Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

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