Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge-Reference-Cited by-同舟云学术

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Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

Published:2010-05-17 Issue:20 Volume:96 Page:201906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Napolitani E.,Bisognin G.,Bruno E.,Mastromatteo M.,Scapellato G. G.,Boninelli S.,De Salvador D.,Mirabella S.,Spinella C.,Carnera A.,Priolo F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3429084

Reference18 articles.

1. Brother Silicon, Sister Germanium

2. Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium

3. Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information

4. Atomic transport in germanium and the mechanism of arsenic diffusion

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1. Milliseconds Thermal Processing of Boron Hyperdoped Germanium;physica status solidi (a);2024-08-04

2. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021

3. Diffusion of boron in germanium at 800–900 °C revisited;Journal of Applied Physics;2020-01-14

4. Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures;Materials;2017-07-17

5. Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy;Materials Science in Semiconductor Processing;2017-05

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