Investigation on the Scaling Performances of Carbon‐Doped Ge 2 Sb 2 Te 5 Thin Films for Phase Change Random Access Memory in a 40 nm Process-Reference-Cited by-同舟云学术

Investigation on the Scaling Performances of Carbon‐Doped Ge 2 Sb 2 Te 5 Thin Films for Phase Change Random Access Memory in a 40 nm Process

Published:2019-09 Issue:22 Volume:216 Page:1900439
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yan Shuai¹²^ORCID,Cai Daolin¹,Xue Yuan¹²,Chen Yifeng¹,Liu Yuanguang¹²,Wu Lei¹²,Song Zhitang¹

Affiliation:

1. State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Shanghai 200050 China

2. University of Chinese Academy of Sciences Beijing 100049 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900439

Reference23 articles.

1. Phase-change materials for rewriteable data storage

2. Phase-change random access memory: A scalable technology

3. R.Bez inIEEE Int. Electron Devices Meeting IEEE Piscataway NJ2009.

4. Phase Change Memory

5. E.Yang K.Okabe C. M.Neumann H.-S. P.Wong E.Pop in76th Device Research Conference IEEE Piscataway NJ2018.

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