Chemical lift-off process for nitride LEDs from an Eco-GaN template using an AlN/strip-patterned-SiO2 sacrificial layer-Reference-Cited by-同舟云学术

Chemical lift-off process for nitride LEDs from an Eco-GaN template using an AlN/strip-patterned-SiO2 sacrificial layer

Published:2017-02-20 Issue:3 Volume:214 Page:1600657
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Horng Ray-Hua¹²,Hsueh Hsu-Hung²,Ou Sin-Liang³,Tsai Chi-Tsung⁴,Tsai Tsung-Yen⁴,Wuu Dong-Sing⁴

Affiliation:

1. Department of Electronics Engineering; National Chiao Tung University; Hsinchu 30010 Taiwan ROC

2. Graduate Institute of Precision Engineering; National Chung Hsing University; Taichung 40227 Taiwan ROC

3. Department of Materials Science and Engineering; Da-Yeh University; Changhua 51591 Taiwan ROC

4. Department of Materials Science and Engineering; National Chung Hsing University; Taichung 40227 Taiwan ROC

Funder

Ministry of Science and Technology (Taiwan, R.O.C.)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching

2. Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates

3. Optical patterning of GaN films

4. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

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