Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application-Reference-Cited by-同舟云学术

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

Published:2016-04-23 Issue:9 Volume:213 Page:2446-2451
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ilse Klemens¹²,Schneider Thomas²,Ziegler Johannes²,Sprafke Alexander²,Wehrspohn Ralf B.²³

Affiliation:

1. Fraunhofer Center for Silicon-Photovoltaics CSP; 06120 Halle (Saale) Germany

2. Department of Physics; Martin Luther University Halle-Wittenberg; 06120 Halle (Saale) Germany

3. Fraunhofer Institute for Microstructure of Material and Systems IMWS; 06120 Halle (Saale) Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Overview of emerging nonvolatile memory technologies

2. Nanocrystals for silicon-based light-emitting and memory devices

3. S. Tiwari F. Rana K. Chan H. Hanafi W. Chan D. Buchanan 521 524

4. Review paper: Nano-floating gate memory devices

5. Multilevel charge storage in silicon nanocrystal multilayers

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