TEM study of defects versus growth orientations in heavily boron-doped diamond-Reference-Cited by-同舟云学术

TEM study of defects versus growth orientations in heavily boron-doped diamond

Published:2015-06-18 Issue:11 Volume:212 Page:2468-2473
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lloret F.¹²,Araujo D.¹,Alegre M. P.¹,Gonzalez-Leal J. M.³,Villar M. P.¹,Eon D.⁴,Bustarret E.⁴

Affiliation:

1. Dpto. Ciencias de los Materiales e IM y QI; Universidad de Cádiz; 11510 Puerto Real Cádiz Spain

2. Institute of Electronic Structure and Laser; FORTH; 1385 VassilikaVouton Heraklion Greece

3. Dpto. Física de la Materia Condensada; Universidad de Cádiz; 11510 Puerto Real Cádiz Spain

4. Institut Néel, CNRS, 25 Avenue des Martyrs; BP 166 38042 Grenoble France

Funder

European project LAST-POWER

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532175/fullpdf

Reference19 articles.

1. Raman scattering by defect-induced excitations in boron-doped diamond single crystals

2. Critical boron-doping levels for generation of dislocations in synthetic diamond

3. Metal-to-insulator transition and superconductivity in boron-doped diamond

4. Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates

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