Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low-cost improved SILAR technique-Reference-Cited by-同舟云学术

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low-cost improved SILAR technique

Published:2015-11-18 Issue:2 Volume:213 Page:436-442
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ravichandran K.¹,Nisha Banu N.¹²,Baneto M.³,Senthamil Selvi V.²

Affiliation:

1. P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi; Thanjavur 613503 Tamil Nadu India

2. Research Department of Physics, Kunthavai Naachiyaar Government Arts College for Women (Autonomous); Thanjavur 613007 Tamil Nadu India

3. CUER-UL, Université de Lomé; BP 1515, Lomé Togo

Funder

University Grants Commission of India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. AFM, XPS and RBS studies of the growth process of CdS thin films on ITO/glass substrates deposited using an ammonia-free chemical process

2. Photovoltaic properties of nanocrystalline CdS films deposited by SILAR and CBD techniques—a comparative study

3. Directional CdS nanowires fabricated by chemical bath deposition

4. Structural, electrical, and optical absorption properties of LaxCd1−xO solid solution films obtained by sol–gel method

5. Growth of CdS thin films and nanowires for flexible photoelectrochemical cells

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