Thin Films Processed by SILAR Method

Abstract

SILAR is one of the simplest techniques in terms of the better flexibility of the substrate choice, capability of large-area fabrication, deposition of stable and adherent film, low processing temperature for the film fabrication as well as reproducibility. This technique is very budget friendly since it does not require any sophisticated equipment. Moreover, various fabrication parameters such as solution concentration, precursors, the number of cycles during immersion, pH, annealing, doping, and growth temperature affect the rate of fabrication as well as the structural, optical, and electrical properties of the fabricated thin films led the technique unique to study in an extensive manner. A chapter regarding different aspects of semiconductors-based optoelectronics by SILAR has yet to be published. This chapter will concern the recent progress that has recently been made in different aspects of materials processed by the SILAR. It will describe the theory, mechanism, and factors affecting SILAR deposition as well as recent advancements in the field. Finally, conclusions and perspectives concerning the use of materials in optoelectronic devices will be represented.