Formation of p-n Junction in a-Se Thin Film and Its Application to High Sensitivity Photodetector Driven by Diamond Cold Cathode-Reference-Cited by-同舟云学术

Formation of p-n Junction in a-Se Thin Film and Its Application to High Sensitivity Photodetector Driven by Diamond Cold Cathode

Published:2017-08-15 Issue:11 Volume:214 Page:1700161
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Masuzawa Tomoaki¹^ORCID,Ohata Akinori²,John Joshua D.²,Saito Ichitaro²,Yamada Takatoshi³,Chua Daniel H. C.⁴,Neo Yoichiro¹,Mimura Hidenori¹,Okano Ken²

Affiliation:

1. Research Institute of Electronics; Shizuoka University; 3-5-1 Johoku, Naka-ku Hamamatsu 432-8011 Japan

2. Department of Physics; International Christian University; 3-10-2 Osawa, Mitaka Tokyo 181-8585 Japan

3. Nanomaterials Research Institute; National Institute of Advanced Industrial Science and Technology; 1-1-1 Higashi Tsukuba 305-8565 Japan

4. Department of Materials Science & Engineering; National University of Singapore; 7 Engineering Drive 1 117574 Singapore

Funder

Japan Society for the Promotion of Science

Shizuoka University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. An avalanche-mode amorphous Selenium photoconductive layer for use as a camera tube target

2. 2∕3in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device

3. Electrostatic-focusing image sensor with volcano-structured Spindt-type field emitter array

4. Lucky drift impact ionization in amorphous semiconductors

5. Avalanche multiplication in amorphous selenium and its utilization in imaging

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