GaN epitaxial lateral overgrowth on laser-textured sapphire-Reference-Cited by-同舟云学术

GaN epitaxial lateral overgrowth on laser-textured sapphire

Published:2014-08-21 Issue:12 Volume:211 Page:2848-2853
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jelmakas Edgaras¹,Alsys Marius¹,Gečys Paulius²,Kadys Arūnas¹,Račiukaitis Gediminas²,Margueron Samuel³,Tomašiūnas Roland¹

Affiliation:

1. Institute of Applied Research; Vilnius University; Sauletekio Ave. 10 10223 Vilnius Lithuania

2. Centre for Physical Sciences and Technology; Savanoriu Ave. 231 02300 Vilnius Lithuania

3. Laboratoire Matériaux Optiques, Photonique et Systèmes; Université de Lorraine et Supélec; 2 rue Edoaurd Belin 57070 Metz France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Fabrication of Patterned Sapphire Substrate by Wet Chemical Etching for Maskless Lateral Overgrowth of GaN

2. Air-voids embedded high efficiency InGaN-light emitting diode

3. Micromachining of quartz with ultrashort laser pulses

4. Surface-texturing of sapphire by femtosecond laser pulses for photonic applications

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1. FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry;Journal of Materials Science: Materials in Electronics;2021-05-04

2. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates;AIP Advances;2016-07