Dual-acceptor doped p -ZnO:(As,Sb)/n -GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector-Reference-Cited by-同舟云学术

Dual-acceptor doped p -ZnO:(As,Sb)/n -GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector

Published:2014-04-22 Issue:9 Volume:211 Page:2072-2077
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Przeździecka E.¹,Wierzbicka A.¹,Dłużewski P.¹,Stachowicz M.¹,Jakieła R.¹,Gościński K.¹,Pietrzyk M. A.¹,Kopalko K.¹,Kozanecki A.¹

Affiliation:

1. Institute of Physics; Polish Academy of Science; Al. Lotników 32/46 02-668 Warsaw Poland

Funder

European Union within European Regional Development Fund

NCN

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201300758/fullpdf

Reference41 articles.

1. ZnO-Based Ultraviolet Photodetectors

2. High-performance UV detector based on Ga-doped zinc oxide thin films

3. Ultraviolet Schottky detector based on epitaxial ZnO thin film

4. Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

5. Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si

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