Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors-Reference-Cited by-同舟云学术

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Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Published:2011-09 Issue:1 Volume:63 Page:37-41
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tsai Shu-Yi,Hon Min-Hsiung,Lu Yang-Ming

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Zinc tin oxide based driver for highly transparent active matrix OLED displays;Gorrn;Solid State Electron,2009

2. Transparent dielectric films for organic thin-film transistors: a perspective for low cost, low size technologies;Orgiu;Thin Solid Films,2008

3. Amorphous IZO-based transparent thin film transistors;Paine;Thin Solid Films,2008

4. Recent advances in ZnO materials and devices;Look;Mat Sci Eng B – Solid,2001

5. Radiation hardness of ZnO at low temperatures;Coskun;Semicond Sci Technol,2004

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3. High gain NiO/ZnO heterojunction photodiodes operated in Deep-ultraviolet region;Thin Solid Films;2024-06

4. Interfacial electronic state between hexagonal ZnO and cubic NiO;RSC Advances;2024

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