Dopant-free complementary metal oxide silicon field effect transistors-Reference-Cited by-同舟云学术

Dopant-free complementary metal oxide silicon field effect transistors

Published:2016-02-08 Issue:6 Volume:213 Page:1494-1499
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Fischer Sergej¹,Kremer Hauke Ingolf¹,Berghoff Birger¹,Maß Tobias²,Taubner Thomas²,Knoch Joachim¹

Affiliation:

1. Institute of Semiconductor Electronics; RWTH Aachen University; Sommerfeldstrasse 24A, 52074 Aachen Germany

2. Institute of Physics IA; RWTH Aachen University; Sommerfeldstrasse 14A, 52074 Aachen Germany

Funder

German Research Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

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