Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes-Reference-Cited by-同舟云学术

Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes

Published:2020-02-06 Issue:7 Volume:217 Page:1900776
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Guo Xiaoru¹,Mughal Asad¹,Dunphy Darren¹,Stone Gregory¹,Miller David¹,Huh Sungwook¹^ORCID

Affiliation:

1. Lumileds Holding B.V. San Jose CA 95131 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900776

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4. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

5. Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High-$k$ Dielectric SOI FinFETs

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