Density of localized state distribution near the valence band in stabilized a-Se using interrupted field time of flight measurements with long interruption times-Reference-Cited by-同舟云学术

Density of localized state distribution near the valence band in stabilized a-Se using interrupted field time of flight measurements with long interruption times

Published:2016-02-19 Issue:7 Volume:213 Page:1856-1863
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Koughia Cyril¹,Reznik Alla²,Allen Christopher¹,Johanson Robert¹,Kasap Safa¹

Affiliation:

1. Department of Electrical Engineering; University of Saskatchewan; 57 Campus Drive Saskatoon SK S7N 5A9 Canada

2. Department of Physics; Lakehead University; 955 Oliver Road Thunder Bay ON P7B 5E1 Canada

Funder

Ontario Research Fund-Research Excellence

Analogic Canada

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532970/fullpdf

Reference36 articles.

1. Amorphous selenium and its alloys from early xeroradiography to high resolution X-ray image detectors and ultrasensitive imaging tubes

2. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

3. Density of states in a-Se from combined analysis of xerographic potentials and transient transport data

4. Computer simulation study of tail-state distribution in amorphous selenium

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