Strain effects on indium incorporation and optical transitions in green‐light InGaN heterostructures of different orientations-Reference-Cited by-同舟云学术

Strain effects on indium incorporation and optical transitions in green‐light InGaN heterostructures of different orientations

Published:2011-07-07 Issue:11 Volume:208 Page:2671-2675
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Durnev M. V.¹²,Omelchenko A. V.²,Yakovlev E. V.¹,Evstratov I. Yu.¹,Karpov S. Yu.¹

Affiliation:

1. STR Group – Soft‐Impact, Ltd., PO Box 83, 27 Engels ave., 194156 St.Petersburg, Russia

2. St.Petersburg Academic University, Nanotechnology Research and Education Centre RAS, 8/3 Khlopin str., 195220 St. Petersburg, Russia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201127278

Reference18 articles.

1. High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates

2. Progress in the growth of nonpolar gallium nitride

3. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

4. AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

5. T.Wernike V.Hoffman C.Netzel H.‐J.Möstl L.Schade H.Wenzel S.Ploch J.Rass A.Knauer U.Schwarz M.Weyers andM.Kneissl in: Abstract Book of ICNS‐8 Jeju Korea 2009 Vol. 2 pp. 955–956.

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