Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes-Reference-Cited by-同舟云学术

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Published:2017-02-24 Issue:8 Volume:214 Page:1600837
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Usami Shigeyoshi¹,Miyagoshi Ryosuke¹,Tanaka Atsushi²,Nagamatsu Kentaro²,Kushimoto Maki¹,Deki Manato²,Nitta Shugo²,Honda Yoshio²,Amano Hiroshi²³⁴

Affiliation:

1. Graduate School of Engineering; Nagoya University; Furo-cho C3-1 464-8603 Nagoya Japan

2. Institute of Materials and Systems for Sustainability; Nagoya University; Furo-cho 464-8603 Nagoya Japan

3. Akasaki Research Center; Nagoya University; Furo-cho 464-0814 Nagoya Japan

4. Venture Business Laboratory; Nagoya University; Furo-cho B2-4 464-0814 Nagoya Japan

Funder

Ministry of Education

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600837/fullpdf

Reference26 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Evidence for Two Mg Related Acceptors in GaN

4. Mg-related acceptors in GaN

5. Properties of the main Mg-related acceptors in GaN from optical and structural studies

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