Ohmic contacts to Al‐rich AlGaN heterostructures-Reference-Cited by-同舟云学术

Ohmic contacts to Al‐rich AlGaN heterostructures

Published:2017-06-06 Issue:8 Volume:214 Page:1600842
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Douglas E. A.¹,Reza S.¹,Sanchez C.¹,Koleske D.¹,Allerman A.¹,Klein B.¹,Armstrong A. M.¹,Kaplar R. J.¹,Baca A. G.¹

Affiliation:

1. Sandia National LaboratoriesPO Box 5800AlbuquerqueNM87185USA

Funder

Laboratory Directed Research and Development

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201600842

Reference30 articles.

1. An AlN/Al0.85Ga0.15N high electron mobility transistor

2. An assessment of wide bandgap semiconductors for power devices

3. Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN

4. AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact

5. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

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